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| CMT2N7002E SMALL SIGNAL MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. FEATURES Low On-Resistance: 3 Low Threshold: 2V (typ.) Low Input Capacitance: 25pF Fast Switching Speed: 7.5ns Low Input and Output Leakage PIN CONFIGURATION SOT-23 SYMBOL D Top View 3 DRAIN SOURCE GATE G 1 2 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002E CMT2N7002EG* *Note: G : Suffix for Pb Free Product Package SOT-23 SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0M) Continuous Drain Current (TJ = 150J ) Pulsed Drain Current (Note 1) Gate-to-Source Voltage Total Power Dissipation TA = 25J TA = 70J Junction to Ambient TA = 25J TA = 70J Symbol VDSS VDGR ID IDM VGS PD TJ, TSTG JA Value 60 60 240 190 1300 20 0.35 0.22 -55 to 150 357 Unit V V mA mA V W J J /W Operating and Storage Temperature Range Thermal Resistance Note1: Pulse Width limited by maximum junction temperature. 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 1 CMT2N7002E SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25J . CMT2N7002E Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 g A) Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TC = 125J ) Gate Body Leakage (VDS = 0 V, VGS = 15 V) Gate Threshold Voltage * (VDS = VGS, ID = 250 g A) On-State Drain Current (Note 2) (VDS = 7.5 V, VGS = 10V) (VDS = 10 V, VGS = 4.5V) Static Drain-Source On-Resistance (Note 2) (VGS = 10 V, ID = 0.25A) (VGS = 4.5 V, ID = 0.2A) Diode Forward On-Voltage (IS = 200 mA, VGS = 0V) Forward Transconductance (VDS = 15 V, ID = 200mA) (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 1,3) Turn-Off Delay Time (Note 1,3) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (Note 1) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (Note 1) (VDD = 10 V, ID = 250 mA, VGEN = 10 V, RG = 10, RL = 40) VSD gFS Qg Qgs Qgd Ciss Coss Crss td(on) td(off) 150 RDS(on) 1.9 3.5 0.85 260 0.4 0.06 0.06 21 7 2.5 13 18 20 25 0.6 3 4 1.2 V mmhos nC nC nC pF pF pF ns ns Id(on) 800 350 1900 450 mA IGSS VGS(th) 1.0 2.0 IDSS 1.0 500 10 2.5 g A g A nA V Symbol V(BR)DSS Min 60 Typ 68 Max Units V Note 1: For Design Aid Only, not subject to production testing. Note 2: Pulse test: PW <= 300s duty cycle <=2% Note 3: Switching time is essentially independent of operating temperature. 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 2 CMT2N7002E SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 3 CMT2N7002E SMALL SIGNAL MOSFET 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 4 CMT2N7002E SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 D 3 b1 With Plating A c1 c A1 A2 E1 b Base Metal Section B-B E b b1 c c1 D E 1 e e1 2 E1 b L L1 e 1 e1 1 2 A2 A 2 A1 See Section B-B L L1 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 5 CMT2N7002E SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2004/11/05 Preliminary Rev. 2 Champion Microelectronic Corporation Page 6 |
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